First-Principles Investigation of Interfacial Reconstruction in Epitaxial SrTiO3/Si Photocathodes
Author:
Affiliation:
1. Theoretical Materials Physics, Q-MAT, CESAM, Université de Liège, Sart Tilman, Liège B-4000, Belgium
2. Advanced Materials Department, Jozef Stefan Institute, Jamova 39, 1000 Ljubljana, Slovenia
Funder
Javna Agencija za Raziskovalno Dejavnost RS
Fonds De La Recherche Scientifique - FNRS
European Research Area Networks
Publisher
American Chemical Society (ACS)
Subject
Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.2c04361
Reference59 articles.
1. Crystalline Oxides on Silicon: The First Five Monolayers
2. Epitaxial growth of β-Ga2O3 on SrTiO3 (001) and SrTiO3-buffered Si (001) substrates by plasma-assisted molecular beam epitaxy
3. Growth and Structure of Strong Pockels Material Strontium Barium Niobate on SrTiO 3 and Si by Molecular Beam Epitaxy
4. Epitaxial Oxides on Semiconductors: From Fundamentals to New Devices
5. Large Pockels effect in micro- and nanostructured barium titanate integrated on silicon
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1. Band alignment at the strontium germanate interface with silicon;Physical Review B;2023-03-14
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