Nanoscale Investigation of Defects and Oxidation of HfSe2
Author:
Affiliation:
1. Physics of Interfaces and Nanomaterials, MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500AE Enschede, The Netherlands
2. School of Physics and Electronics, Hunan University, 410082 Changsha, China
Funder
Nederlandse Organisatie voor Wetenschappelijk Onderzoek
Publisher
American Chemical Society (ACS)
Subject
Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials
Link
http://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.8b08713
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1. Single-layer MoS2 transistors
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5. Emerging Photoluminescence in Monolayer MoS2
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