Competition between Metallic and Vacancy Defect Conductive Filaments in a CH3NH3PbI3-Based Memory Device-Reference-Cited by-同舟云学术

Competition between Metallic and Vacancy Defect Conductive Filaments in a CH3NH3PbI3-Based Memory Device

Author:

Sun Yiming¹²,Tai Meiqian³,Song Cheng¹²^ORCID,Wang Ziyu¹,Yin Jun¹,Li Fan¹²,Wu Huaqiang²,Zeng Fei¹^ORCID,Lin Hong³,Pan Feng¹²

Affiliation:

1. Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China

2. Beijing Innovation Center for Future Chip, Tsinghua University, Beijing 100084, China

3. State Key Laboratory of New Ceramics & Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China

Funder

Ministry of Science and Technology of the People's Republic of China

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

Reference50 articles.

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