Electronic and Transport Properties in Defective MoS2: Impact of Sulfur Vacancies-Reference-Cited by-同舟云学术

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Electronic and Transport Properties in Defective MoS2: Impact of Sulfur Vacancies

Published:2020-06-18 Issue:28 Volume:124 Page:15076-15084
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Gali Sai Manoj¹^ORCID,Pershin Anton¹²,Lherbier Aurélien³,Charlier Jean-Christophe³,Beljonne David¹^ORCID

Affiliation:

1. Laboratory for Chemistry of Novel Materials, University of Mons, 7000 Mons, Belgium

2. Wigner Research Centre for Physics, P.O. Box 49, H-1525 Budapest, Hungary

3. Institute of Condensed Matter and Nanosciences, Université catholique de Louvain (UCLouvain), 1348 Louvain-la-Neuve, Belgium

Funder

F?d?ration Wallonie-Bruxelles

Horizon 2020 Framework Programme

Fonds De La Recherche Scientifique - FNRS

Francqui-Stichting Foundation

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.0c04203

Reference55 articles.

1. Van der Waals heterostructures

2. Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene

3. Graphene: Status and Prospects

4. The electronic properties of graphene

5. 2D materials: to graphene and beyond

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