Passivation Mechanism of the Native Oxide/InAs Interface by Fluorine-Reference-Cited by-同舟云学术

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Passivation Mechanism of the Native Oxide/InAs Interface by Fluorine

Published:2017-09-19 Issue:38 Volume:121 Page:20744-20750
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Valisheva N. A.¹,Bakulin A. V.²³,Aksenov M. S.¹⁴^ORCID,Khandarkhaeva S. E.¹⁴,Kulkova S. E.²³

Affiliation:

1. Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentiev Avenue, Novosibirsk 630090, Russian Federation

2. Institute of Strength Physics and Materials Science SB RAS, 2/4 Akademichesky Avenue, Tomsk 634055, Russian Federation

3. Tomsk State University, 36 Lenin Avenue, Tomsk 634050, Russian Federation

4. Novosibirsk State University, 2 Pirogov Street, Novosibirsk 630090, Russian Federation

Funder

Russian Foundation for Basic Research

Tomsk State University

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.7b03757

Reference30 articles.

1. Interfacial chemistry of oxides on InxGa(1−x)As and implications for MOSFET applications

2. Effects of Wet Chemical and Trimethyl Aluminum Treatments on the Interface Properties in Atomic Layer Deposition of Al2O3on InAs

3. Reduction of native oxides on InAs by atomic layer deposited Al2O3 and HfO2

4. Al2O3/InAs metal-oxide-semiconductor capacitors on (100) and (111)B substrates

5. Defect state passivation at III-V oxide interfaces for complementary metal–oxide–semiconductor devices

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Role of Oxygen and Fluorine in Passivation of the GaSb(111) Surface Depending on Its Termination;Crystals;2022-03-30

2. Al₂O₃/InGaAs interface passivation by fluorine-containing anodic layers;Journal of Applied Physics;2022-02-28

3. The Effect of Fluorine on the Density of States at the Anodic Oxide Layer/In0.53Ga0.47As Interface;Technical Physics Letters;2021-12-15

4. Modification of the Atomic and Electronic Structure of III–V Semiconductor Surfaces at Interfaces with Electrolyte Solutions (Review);Semiconductors;2020-06-30

5. Effect of Oxygen and Fluorine Absorption on the Electronic Structure of the InSb(111) Surface;Semiconductors;2020-01

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