Thickness-Dependent Ultrafast Photocarrier Dynamics in Selenizing Platinum Thin Films-Reference-Cited by-同舟云学术

Thickness-Dependent Ultrafast Photocarrier Dynamics in Selenizing Platinum Thin Films

Published:2020-04-22 Issue:19 Volume:124 Page:10719-10726
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Fu Jibo¹,Xu Wenqi²,Chen Xin³,Zhang Saifeng³,Zhang Wenjie¹,Suo Peng¹,Lin Xian¹,Wang Jun³⁴^ORCID,Jin Zuanming¹⁴^ORCID,Liu Weimin²⁴,Ma Guohong¹⁴^ORCID

Affiliation:

1. Department of Physics, Shanghai University, Shanghai 200444, P. R. China

2. School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, P. R. China

3. Laboratory of Micro-Nano Optoelectronic Materials and Devices, Key Laboratory of Materials for High-Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, P. R. China

4. STU & SIOM Joint Laboratory for Superintense Lasers and the Applications, Shanghai 201210, P. R. China

Funder

Shanghai Municipal Education Commission

Science and Technology Commission of Shanghai Municipality

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.0c01509

Reference51 articles.

1. Facile Synthesis of Single Crystal PtSe2Nanosheets for Nanoscale Electronics

2. High-Performance Hybrid Electronic Devices from Layered PtSe2 Films Grown at Low Temperature

3. PtSe2 Field-Effect Transistors: New Opportunities for Electronic Devices

4. Controlled Doping of Wafer‐Scale PtSe 2 Films for Device Application

5. Atomically thin noble metal dichalcogenide: a broadband mid-infrared semiconductor

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