Few-Layer Tin Sulfide: A New Black-Phosphorus-Analogue 2D Material with a Sizeable Band Gap, Odd–Even Quantum Confinement Effect, and High Carrier Mobility-Reference-Cited by-同舟云学术

Few-Layer Tin Sulfide: A New Black-Phosphorus-Analogue 2D Material with a Sizeable Band Gap, Odd–Even Quantum Confinement Effect, and High Carrier Mobility

Published:2016-09-23 Issue:39 Volume:120 Page:22663-22669
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Xin Chao¹,Zheng Jiaxin¹,Su Yantao¹,Li Shuankui¹,Zhang Bingkai¹,Feng Yancong¹,Pan Feng¹

Affiliation:

1. School of Advanced Materials, Peking University Shenzhen Graduate School, Shenzhen 518055, China

Funder

National Natural Science Foundation of China

Guangdong Province

OptimumNano Energy Co.,Ltd

Science Technology and Innovation Committee of Shenzhen Municipality

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.6b06673

Reference37 articles.

1. Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene

2. Significant effect of stacking on the electronic and optical properties of few-layer black phosphorus

3. High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus

4. Approaching ballistic transport in suspended graphene

5. Effects of strain on band structure and effective masses in MoS2

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