Study of the Polarization Effect in InAs Quantum Dots/GaAs Nanowires-Reference-Cited by-同舟云学术

Study of the Polarization Effect in InAs Quantum Dots/GaAs Nanowires

Published:2019-01-25 Issue:7 Volume:123 Page:4228-4234
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Cheng Feng¹,Li Bang²,Li Luying¹^ORCID,Wang Xi¹,Shen Shaoli¹,Liu Weijie¹,Zheng He³^ORCID,Jia Shuangfeng³^ORCID,Yan Xin²,Zhang Xia²,Wang Jianbo³^ORCID,Gao Yihua¹^ORCID

Affiliation:

1. Center for Nanoscale Characterization & Devices, Wuhan National Laboratory for Optoelectronics and School of Physics, Huazhong University of Science and Technology, Luoyu Road 1037, Wuhan 430074, China

2. State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China

3. School of Physics and Technology, Center for Electron Microscopy, MOE Key Laboratory of Artificial Micro- and Nano-Structures and the Institute for Advanced Studies, Wuhan University, Wuhan 430072, China

Funder

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.8b11425

Reference49 articles.

1. Multi-quantum-well nanowire heterostructures for wavelength-controlled lasers

2. Study of Electronic and Optical Properties of CuInSe2 Nanowires

3. Monolithic InGaAs Nanowire Array Lasers on Silicon-on-Insulator Operating at Room Temperature