Transition Metal Doping of Phase Change Materials: Atomic Arrangement of Cr-Doped Ge2Sb2Te5

Author:

Wang Qing12,Konze Philipp M.3,Liu Guangyu12ORCID,Liu Bo14,Chen Xin12,Song Zhitang1,Dronskowski Richard356ORCID,Zhu Min1ORCID

Affiliation:

1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

2. University of the Chinese Academy of Sciences, Beijing 100049, China

3. Chair of Solid-State and Quantum Chemistry, Institute of Inorganic Chemistry, RWTH Aachen University, 52056 Aachen, Germany

4. School of Chemical Biology and Materials Engineering, Suzhou University of Science and Technology, Suzhou 215009, Jiangsu Province, China

5. Jülich-Aachen Research Alliance (JARA-FIT and JARA-CSD), RWTH Aachen University, 52056 Aachen, Germany

6. Hoffmann Institute of Advanced Materials, Shenzhen Polytechnic, 7098 Liuxian Blvd, Nanshan District, 518055 Shenzhen, China

Funder

Ministry of Science and Technology of the People's Republic of China

Deutsche Forschungsgemeinschaft

Chinese Academy of Sciences

Suzhou Key Laboratory for Nanophotonic and Nanoelectronic Materials and Its Devices

Jülich–Aachen Research Alliance

Shanghai Municipality

Jiangsu Key Laboratory for Environment Functional Materials, Suzhou University of Science and Technology

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

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