Site-Selective Oxygen Vacancy Formation Derived from the Characteristic Crystal Structures of Sn–Nb Complex Oxides-Reference-Cited by-同舟云学术

Site-Selective Oxygen Vacancy Formation Derived from the Characteristic Crystal Structures of Sn–Nb Complex Oxides

Published:2021-07-30 Issue:31 Volume:125 Page:17117-17124
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Samizo Akane¹^ORCID,Minohara Makoto²^ORCID,Kikuchi Naoto²^ORCID,Bando Kyoko K.³,Aiura Yoshihiro²^ORCID,Mibu Ko⁴^ORCID,Nishio Keishi¹

Affiliation:

1. Department of Materials Science and Technology, Tokyo University of Science, Katsushika 125-8585, Japan

2. Research Institute for Advanced Electronics and Photonics, National Institute of Advanced Industrial Science and Technology, Tsukuba 305-8568, Ibaraki, Japan

3. Nanomaterials Research Institute, National Institute of Advanced Industrial Science and Technology, Tsukuba 305-8565, Ibaraki, Japan

4. Department of Physical Science and Engineering, Nagoya Institute of Technology, Nagoya 466-8555, Japan

Funder

Japan Society for the Promotion of Science

High Energy Accelerator Research Organization

Tokyo University of Science

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.0c11423

Reference39 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

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5. P-type transparent conducting oxides

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