Competing Growth Pathways of γ- and α-Al<sub>2</sub>O<sub>3</sub> during Solid-Phase Epitaxy: The Critical Role of Interfacial Reconstruction-Reference-Cited by-同舟云学术

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Competing Growth Pathways of γ- and α-Al₂O₃ during Solid-Phase Epitaxy: The Critical Role of Interfacial Reconstruction

Published:2024-06-12 Issue:25 Volume:128 Page:10634-10642
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Wan Zhongyi¹^ORCID,Schmidt J. R.¹^ORCID

Affiliation:

1. Department of Chemistry, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States

Funder

Division of Materials Research

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.4c01495

Reference38 articles.

1. Wefers, K.; Misra, C. Oxides and Hydroxides of Aluminum; Alcoa Laboratories: Pittsburgh, 1987; Vol. 19, pp 1–92.

2. Metastable SiGeC formation by solid phase epitaxy

3. The stabilization of metastable phases by epitaxy

4. Solid-Phase Epitaxy

5. On the structure of γ-Al2O3

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1. Adsorption-controlled growth of homoepitaxial c-plane sapphire films;APL Materials;2024-09-01

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