Relationship between Ta Oxidation State and Its Local Atomic Coordination Symmetry in a Wide Range of Oxygen Nonstoichiometry Extent of TaOx
Author:
Affiliation:
1. Institute of Physics, St-Petersburg State University, Ulyanovskaya Str. 3, Peterhof, 198504 St. Petersburg, Russia
2. Institute for Solid State and Materials Physics, Technische Universität Dresden, 01062 Dresden, Germany
Funder
Helmholtz-Zentrum Berlin f?r Materialien und Energie
Publisher
American Chemical Society (ACS)
Subject
Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.8b12053
Reference43 articles.
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3. High switching endurance in TaOx memristive devices
4. Spectromicroscopy of tantalum oxide memristors
5. Recent progress in resistive random access memories: Materials, switching mechanisms, and performance
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