Detecting a Hierarchy of Deep-Level Defects in the Model Semiconductor ZnSiN2-Reference-Cited by-同舟云学术

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Detecting a Hierarchy of Deep-Level Defects in the Model Semiconductor ZnSiN2

Published:2021-12-15 Issue:51 Volume:125 Page:27959-27965
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

de Boer Tristan¹^ORCID,Häusler Jonas²,Strobel Philipp³,Boyko Teak D.⁴^ORCID,Rudel Stefan S.²,Schnick Wolfgang²^ORCID,Moewes Alexander¹^ORCID

Affiliation:

1. Department of Physics and Engineering Physics, University of Saskatchewan, S7N 5E2 Saskatoon, Saskatchewan, Canada

2. Department of Chemistry, University of Munich (LMU), Butenandtstrasse 5-13, 81377 Munich, Germany

3. Lumileds Germany, Philipsstrasse 8, D-52068 Aachen, Germany

4. Canadian Light Source, S7N 2V3 Saskatoon, Saskatchewan, Canada

Funder

Canadian Institutes of Health Research

National Research Council Canada

Canada Foundation for Innovation

Deutsche Forschungsgemeinschaft

University of Saskatchewan

Natural Sciences and Engineering Research Council of Canada

Government of Saskatchewan

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.1c08115

Reference40 articles.

1. Synthesis, lattice structure, and band gap of ZnSnN2

2. Bandgap Tunability in Zn(Sn,Ge)N2Semiconductor Alloys

3. Ammonothermal Synthesis of Earth-Abundant Nitride Semiconductors ZnSiN2 and ZnGeN2 and Dissolution Monitoring by In Situ X-ray Imaging

4. Ammonothermal Synthesis of Nitrides: Recent Developments and Future Perspectives

5. Solid Solutions of Grimm–Sommerfeld Analogous Nitride Semiconductors II‐IV‐N 2 (II=Mg, Mn, Zn; IV=Si, Ge): Ammonothermal Synthesis and DFT Calculations

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The importance of lone pairs to structure and bonding of the novel germanium nitridophosphate GeP₂N₄;Journal of Materials Chemistry A;2023

2. Band gap and electronic structure of defects in the ternary nitride BP₃N₆: experiment and theory;Journal of Materials Chemistry C;2022

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