Synthesis, lattice structure, and band gap of ZnSnN2

Author:

Quayle Paul C.,He Keliang,Shan Jie,Kash Kathleen

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science

Reference19 articles.

1. M.A. Khan: AlGaN multiple quantum well based deep UV LEDs and their applications. Phys. Status Solidi A 203, 1764 (2006).

2. M.M. Mills: The LED illumination revolution. Forbes, 02/27/2008.

3. J. Wu, W. Walukiewicz, K.M. Yu, W. Shan, J.W. Ager, III, E.E. Haller, H. Lu, W.J. Schaff, W.K. Metzger, and S. Kurtz: Superior radiation resistance of In1-xGaxN alloys: Full-solar-spectrum photovoltaic material system. J. Appl. Phys. 94, 6477 (2003).

4. A. Punya, W.R.L. Lambrecht, and M. van Schilfgaarde: Quasiparticle band structure of Zn-IV-N2 compounds. Phys. Rev. B 84, 165204 (2011).

5. N. Feldberg, B. Keen, J.D. Aldous, D.O. Scanlon, P.A. Stampe, R.J. Kennedy, R.J. Reeves, T.D. Veal, and S.M. Durbin: ZnSnN2: a new earth-abundant element semiconductor for solar cells. Proc. of the 38th IEEE Photovoltaic Specialists Conference, Austin, TX, p. 2524 (2012).

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