Effect of Surface States and Breakdown of the Schottky–Mott Limit of Graphene/Silicon van der Waals Heterostructure-Reference-Cited by-同舟云学术

Effect of Surface States and Breakdown of the Schottky–Mott Limit of Graphene/Silicon van der Waals Heterostructure

Published:2020-04-06 Issue:16 Volume:124 Page:8958-8970
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Vu Nam Hoang¹²³^ORCID,Van Le Hieu¹²,Phan Thang Bach³^ORCID,Nguyen Toan The⁴^ORCID,Thoai Nam²⁵,Cao Thi Minh⁶

Affiliation:

1. Faculty of Materials Science and Technology, University of Science, Ho Chi Minh City 700000, Vietnam

2. Vietnam National University, Ho Chi Minh City 700000, Vietnam

3. Center for Innovative Materials and Architectures, Vietnam National University, Ho Chi Minh City 700000, Vietnam

4. VNU Key Laboratory on Multiscale Simulation of Complex Systems, Faculty of Physics, University of Science, Vietnam National University, Hanoi, Hanoi 10000, Vietnam

5. High-Performance Computing Lab, Faculty of Computer Science and Engineering, Ho Chi Minh City University of Technology (HCMUT), Ho Chi Minh City 700000, Vietnam

6. Ho Chi Minh City University of Technology (HUTECH), Ho Chi Minh City 700000, Vietnam

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.0c01257

Reference62 articles.

1. Graphene-On-Silicon Schottky Junction Solar Cells

2. Tunable Graphene–Silicon Heterojunctions for Ultrasensitive Photodetection

3. Graphene Barristor, a Triode Device with a Gate-Controlled Schottky Barrier

4. Surface States and Barrier Height of Metal‐Semiconductor Systems

5. Theory of Surface States

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