Size-Dependent Mutual Charge Transfer between B- and P-Codoped Si Quantum Dots and Monolayer MoS2
Author:
Affiliation:
1. Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Rokkodai, Nada, Kobe 657-8501, Japan
Funder
Japan Society for the Promotion of Science
Publisher
American Chemical Society (ACS)
Subject
Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.2c04509
Reference60 articles.
1. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
2. Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe2
3. Large Area Growth and Electrical Properties of p-Type WSe2 Atomic Layers
4. High-temperature driven inter-valley carrier transfer and significant fluorescence enhancement in multilayer WS2
5. Electrically tunable excitonic light-emitting diodes based on monolayer WSe2 p–n junctions
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1. High-Detectivity UV-Sensitive 2D MoS2 Phototransistors Enhanced by Silicon Quantum Dots;ACS Photonics;2024-09-11
2. Spectroscopic Study of the Excitonic Structure in Monolayer MoS2 under Multivariate Physical and Chemical Stimuli;physica status solidi (a);2023-06
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