Real-Time Study of CVD Growth of Silicon Oxide on Rutile TiO2(110) Using Tetraethyl Orthosilicate-Reference-Cited by-同舟云学术

Real-Time Study of CVD Growth of Silicon Oxide on Rutile TiO2(110) Using Tetraethyl Orthosilicate

Published:2015-08-05 Issue:33 Volume:119 Page:19149-19161
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Chaudhary Shilpi¹,Head Ashley R.¹,Sánchez-de-Armas Rocío²,Tissot Héloïse³⁴,Olivieri Giorgia⁴,Bournel Fabrice³⁴,Montelius Lars⁵,Ye Lei⁶,Rochet François³⁴,Gallet Jean-Jacques³⁴,Brena Barbara²,Schnadt Joachim¹

Affiliation:

1. Division of Synchrotron Radiation Research, Department of Physics, Lund University, Box 118, 221 00 Lund, Sweden

2. Materials Theory, Department of Physics and Astronomy, Uppsala University, Box 516, 751 20 Uppsala, Sweden

3. Sorbonne Universités, UPMC Univ Paris 06, UMR 7614, Laboratoire de Chimie Physique - Matière et Rayonnement, 11 rue Pierre et Marie Curie, 75231 Paris Cedex 05, France

4. Synchrotron SOLEIL, L’Orme des Merisiers, 91190 Saint Aubin, France

5. Division of Solid State Physics, Department of Physics, Lund University, Box 118, 221 00 Lund, Sweden

6. Division of Pure and Applied Biochemistry, Lund University, Box 124, 221 00 Lund, Sweden

Funder

Vetenskapsr?det

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.5b04985

Reference57 articles.