Behavior of a GaSb (100) Surface in the Presence of H2O2 in Wet-Etching Solutions-Reference-Cited by-同舟云学术

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Behavior of a GaSb (100) Surface in the Presence of H2O2 in Wet-Etching Solutions

Published:2015-10-22 Issue:44 Volume:119 Page:24774-24780
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Seo Dongwan¹,Na Jihoon¹,Lee Seunghyo¹,Lim Sangwoo¹

Affiliation:

1. Department of Chemical and Biomolecular Engineering, Yonsei University, Seoul 120-749, South Korea

Funder

Ministry of Trade, Industry and Energy

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.5b04250

Reference30 articles.

1. Nanometre-scale electronics with III–V compound semiconductors

2. Cross-Contamination Risk Evaluation during Fabrication of III-V Devices in a Silicon Processing Environment

3. Passivation of InSb(100) with 1-Eicosanethiol Self-Assembled Monolayers

4. Enhancement-Mode GaAs MOSFETs With an $\hbox{In}_{0.3} \hbox{Ga}_{0.7}\hbox{As}$ Channel, a Mobility of Over 5000 $ \hbox{cm}^{2}/\hbox{V} \cdot \hbox{s}$, and Transconductance of Over 475 $\mu\hbox{S}/\mu\hbox{m}$

5. III-Sb MOSFETS : Opportunities and Challenges

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1. MBE growth of mid-wavelength type II InAs/InAsSb superlattice photodetectors with wet etching and Al2O3 passivation;Vacuum;2024-06

2. Effects of Si ion implantation on the surface and electrical characteristics of epitaxial GaSb;Vacuum;2022-04

3. Facile surface treatment of precursors before rapid melt growth of GaSb on silicon;Thin Solid Films;2021-08

4. Interface Optimization and Modulation of Leakage Current Conduction Mechanism of Yb2O3/GaSb MOS Capacitors with ALD-Driven Laminated Interlayers;ACS Applied Electronic Materials;2021-02-10

5. Surface leakage current reduction of InAsSb nBn MWIR HOT detector via hydrogen peroxide treatment;Infrared Physics & Technology;2021-01

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