Unconventional Thermally Activated Indirect to Direct Radiative Recombination of Electrons and Holes in Tin Disulfide Two-Dimensional van der Waals Material-Reference-Cited by-同舟云学术

Unconventional Thermally Activated Indirect to Direct Radiative Recombination of Electrons and Holes in Tin Disulfide Two-Dimensional van der Waals Material

Published:2019-04-17 Issue:18 Volume:123 Page:11968-11973
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Bhaskar Prashant¹^ORCID,Achtstein Alexander W.²^ORCID,Vermeulen Martien J. W.¹,Siebbeles Laurens D. A.¹^ORCID

Affiliation:

1. Optoelectronic Materials Section, Department of Chemical Engineering, Delft University of Technology, Van der Maasweg 9, 2629 HZ Delft, The Netherlands

2. Institute of Optics and Atomic Physics, Technical University of Berlin, Strasse des 17. Juni 135, 10623 Berlin, Germany

Funder

Nederlandse Organisatie voor Wetenschappelijk Onderzoek

Deutsche Forschungsgemeinschaft

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

http://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.9b01842

Reference49 articles.

1. Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family