Localized Charge Transfer Process and Surface Band Bending in Methane Sensing by GaN Nanowires-Reference-Cited by-同舟云学术

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Localized Charge Transfer Process and Surface Band Bending in Methane Sensing by GaN Nanowires

Published:2015-09-01 Issue:36 Volume:119 Page:21251-21260
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Patsha Avinash¹,Sahoo Prasana²,Amirthapandian S.³,Prasad Arun K.¹,Das A.¹,Tyagi A. K.¹,Cotta Monica A.²,Dhara Sandip¹

Affiliation:

1. Surface and Nanoscience Division, Indira Gandhi Centre for Atomic Research, Kalpakkam-603102, India

2. Instituto de Física “Gleb Wataghin”, Universidade Estadual de Campinas, 13083-859 Campinas, São Paulo, Brazil

3. Metal Physics Division, Indira Gandhi Centre for Atomic Research, Kalpakkam-603102, India

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.5b06971

Reference48 articles.

1. Tuning the surface Fermi level on p-type gallium nitride nanowires for efficient overall water splitting

2. Highly Stable Photoelectrochemical Water Splitting and Hydrogen Generation Using a Double-Band InGaN/GaN Core/Shell Nanowire Photoanode

3. Wafer-Level Photocatalytic Water Splitting on GaN Nanowire Arrays Grown by Molecular Beam Epitaxy

4. Photocatalytic Water Oxidation at the GaN (101̅0)−Water Interface

5. Ultrasensitive in Situ Label-Free DNA Detection Using a GaN Nanowire-Based Extended-Gate Field-Effect-Transistor Sensor

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