Optimization of V-Pits Forming in GaN for NO₂ Detection at Room Temperature-Reference-Cited by-同舟云学术

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Optimization of V-Pits Forming in GaN for NO₂ Detection at Room Temperature

Published:2024-08-01 Issue:15 Volume:24 Page:23497-23504
ISSN:1530-437X
Container-title:IEEE Sensors Journal
language:
Short-container-title:IEEE Sensors J.

Author:

Han Dan¹^ORCID,Duan Qi¹,Han Xiaomei¹,Wang Yu¹,Liu Dongming¹,Shi Jiexu¹,Hong Yutao¹,Li Donghui¹^ORCID,He Xiuli²,Xu Bingshe³^ORCID,Sang Shengbo¹^ORCID

Affiliation:

1. College of Electronic Information and Optical Engineering, Taiyuan University of Technology, Taiyuan, China

2. Institute of electronics, Chinese Academy of Sciences, Beijing, China

3. Key Laboratory of Interface Science and Engineering in Advanced Materials Ministry of Education, Taiyuan University of Technology, Taiyuan, China

Funder

National Natural Science Foundation of China

Shanxi Provincial Key Research and Development Project

Water Resources Department Program of Shanxi Province

Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/7361/10617804/10559793.pdf?arnumber=10559793

Reference48 articles.

1. Hydrothermal Synthesis of Hierarchical SnO2 Nanostructures for Improved Formaldehyde Gas Sensing

2. Lattice expansion and oxygen vacancy of α-Fe2O3 during gas sensing

3. A La2O3 Nanoparticle SO2 Gas Sensor that Uses a ZnO Thin Film and Au Adsorption

4. Tunable NH4F-Assisted Synthesis of 3D Porous In2O3 Microcubes for Outstanding NO2 Gas-Sensing Performance: Fast Equilibrium at High Temperature and Resistant to Humidity at Room Temperature

5. Gas-Sensing Properties of Cu2S–MoSe2 Nanosheets to NO2 and NH3 Gases

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