Correcting Flaws in the Assignment of Nitrogen Chemical Environments in N-Doped Graphene-Reference-Cited by-同舟云学术

Correcting Flaws in the Assignment of Nitrogen Chemical Environments in N-Doped Graphene

Published:2019-04-11 Issue:17 Volume:123 Page:11319-11327
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Figueras Marc¹,Villar-Garcia Ignacio J.²,Viñes Francesc¹^ORCID,Sousa Carmen¹^ORCID,de la Peña O’Shea Victor A.²^ORCID,Illas Francesc¹^ORCID

Affiliation:

1. Departament de Ciència de Materials i Química Física & Institut de Química Teòrica i Computacional (IQTCUB), Universitat de Barcelona, c/Martí i Franquès 1, 08028 Barcelona, Spain

2. Photoactivated Processes Unit, IMDEA Energy Institute, Parque Tecnológico de Móstoles, Avda. Ramón de la Sagra 3, 28935 Móstoles, Madrid, Spain

Funder

Generalitat de Catalunya

Instituci? Catalana de Recerca i Estudis Avan?ats

European Regional Development Fund

Ministerio de Econom?a y Competitividad

Ministerio de Ciencia e Innovaci?n

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.9b02554

Reference51 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. The rise of graphene

3. The electronic properties of graphene

4. Honeycomb Carbon: A Review of Graphene

5. N-Doping of Graphene Through Electrothermal Reactions with Ammonia

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