Ion Beam Doping of Silicon Nanowires-Reference-Cited by-同舟云学术

Ion Beam Doping of Silicon Nanowires

Published:2008-06-25 Issue:8 Volume:8 Page:2188-2193
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Colli Alan¹,Fasoli Andrea¹,Ronning Carsten¹,Pisana Simone¹,Piscanec Stefano¹,Ferrari Andrea C.¹

Affiliation:

1. Nokia Research Centre Cambridge U.K., c/o Nanoscience Centre, Cambridge CB3 0FF, U.K., Department of Engineering, University of Cambridge, Cambridge CB3 0FA, U.K., and Institute for Solid State Physics, University of Jena, Max-Wien-Platz 1, 07743 Jena, Germany

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl080610d

Reference42 articles.

1. Nanowire electronic and optoelectronic devices

2. Doping and Electrical Transport in Silicon Nanowires

3. Synthesis and Fabrication of High-Performance n-Type Silicon Nanowire Transistors

4. Complementary Symmetry Silicon Nanowire Logic: Power‐Efficient Inverters with Gain

5. Logic Gates and Computation from Assembled Nanowire Building Blocks

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