Highly Reliable Carbon Nanotube Transistors with Patterned Gates and Molecular Gate Dielectric-Reference-Cited by-同舟云学术

Highly Reliable Carbon Nanotube Transistors with Patterned Gates and Molecular Gate Dielectric

Published:2009-02-26 Issue:4 Volume:9 Page:1335-1340
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Weitz R. Thomas¹,Zschieschang Ute¹,Forment-Aliaga Alicia¹,Kälblein Daniel¹,Burghard Marko¹,Kern Klaus¹,Klauk Hagen¹

Affiliation:

1. Max Planck Institute for Solid State Research, Heisenbergstrasse 1, D-70569 Stuttgart, Germany, and Institut de Physique des Nanostructures, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl802982m

Reference31 articles.

1. Band-to-Band Tunneling in Carbon Nanotube Field-Effect Transistors

2. DNA Functionalization of Carbon Nanotubes for Ultrathin Atomic Layer Deposition of High κ Dielectrics for Nanotube Transistors with 60 mV/Decade Switching

3. High-Performance Carbon Nanotube Field Effect Transistors with a Thin Gate Dielectric Based on a Self-Assembled Monolayer

4. Carbon Nanotube Field-Effect Transistors with Integrated Ohmic Contacts and High-κ Gate Dielectrics

5. Self-Aligned Ballistic Molecular Transistors and Electrically Parallel Nanotube Arrays

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