Homo- and Hetero- p–n Junctions Formed on Graphene Steps-Reference-Cited by-同舟云学术

Homo- and Hetero- p–n Junctions Formed on Graphene Steps

Published:2013-12-19 Issue:1 Volume:6 Page:3-8
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Wang Xiaomu¹,Xie Weiguang²,Chen Jian³,Xu Jian-Bin¹

Affiliation:

1. Department of Electronic Engineering and Materials Science and Research Technology Center, The Chinese University of Hong Kong, Shatin, N. T., Hong Kong SAR, China

2. Siyuan Laboratory, Department of Physics, Jinan University, Guangzhou, Guangdong, P. R. China

3. Instrumental Analysis & Research Center, Sun Yat-sen University, Guangzhou 510275, P. R. China

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/am402808p

Reference39 articles.

1. The rise of graphene

2. Graphene-Based Materials: Synthesis, Characterization, Properties, and Applications

3. Graphene-based electronic sensors

4. Quantized Transport in Graphene p-n Junctions in a Magnetic Field

5. Quantum interference and Klein tunnelling in graphene heterojunctions

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