Exciton-dominant photoluminescence of MoS<sub>2</sub> by a functionalized substrate-Reference-Cited by-同舟云学术

Exciton-dominant photoluminescence of MoS₂ by a functionalized substrate

Published:2022 Issue:38 Volume:14 Page:14106-14112
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Ji Eunji¹,Yang Kyungmin²,Shin June-Chul²,Kim Youngbum³,Park Jin-Woo¹^ORCID,Kim Jeongyong³^ORCID,Lee Gwan-Hyoung²⁴⁵⁶^ORCID

Affiliation:

1. Department of Material Science and Engineering, Yonsei University, Seoul, 03722, Korea

2. Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Korea

3. Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea

4. Research Institute of Advanced Materials (RIAM), Seoul National University, Seoul 08826, Korea

5. Institute of Engineering Research, Seoul National University, Seoul 08826, Korea

6. Institute of Applied Physics, Seoul National University, Seoul 08826, Korea

Abstract

A photoluminescence mapping image of monolayer (1L) MoS2 clearly shows the difference in PL intensity at the boundary between bare SiO2 and plasma-treated SiO2 (3 min).

Funder

National Research Foundation of Korea

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2022/NR/D2NR03455G

Reference45 articles.

1. Emerging Photoluminescence in Monolayer MoS2

2. Recent Advances in Electronic and Optoelectronic Devices Based on Two-Dimensional Transition Metal Dichalcogenides

3. Recent development of two-dimensional transition metal dichalcogenides and their applications

4. From Bulk to Monolayer MoS2: Evolution of Raman Scattering

5. The indirect to direct band gap transition in multilayered MoS2 as predicted by screened hybrid density functional theory

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