High-Performance CdSe:In Nanowire Field-Effect Transistors Based on Top-Gate Configuration with High-κ Non-Oxide Dielectrics-Reference-Cited by-同舟云学术

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High-Performance CdSe:In Nanowire Field-Effect Transistors Based on Top-Gate Configuration with High-κ Non-Oxide Dielectrics

Published:2010-03-18 Issue:10 Volume:114 Page:4663-4668
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

He Zhubing,Zhang Wenjun,Zhang Wenfeng,Jie Jiansheng,Luo Linbao,Yuan Guodong,Wang Jianxiong,Wu C. M. L.,Bello Igor,Lee Chun-Sing,Lee Shuit-Tong

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp1007895

Cited by 23 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Low-dimensional II–VI semiconductor nanostructures of ternary alloys and transition metal ion doping: synthesis, optical properties and applications;Materials Advances;2024

3. Drift velocity saturation in field-effect transistors based on single CdSe nanowires;Physical Chemistry Chemical Physics;2023

4. Synthesis and application of CdSe functional material;Functional Materials from Carbon, Inorganic, and Organic Sources;2023

5. Material properties and potential applications of CdSe semiconductor nanocrystals;Nanoscale Compound Semiconductors and their Optoelectronics Applications;2022

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