Chemical and Structural Investigation of High-Resolution Patterning with HafSOx-Reference-Cited by-同舟云学术

Chemical and Structural Investigation of High-Resolution Patterning with HafSOx

Published:2014-02-17 Issue:4 Volume:6 Page:2917-2921
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Oleksak Richard P.¹,Ruther Rose E.¹²,Luo Feixiang³,Fairley Kurtis C.⁴,Decker Shawn R.²,Stickle William F.⁵,Johnson Darren W.⁴,Garfunkel Eric L.³,Herman Gregory S.¹,Keszler Douglas A.²

Affiliation:

1. School of Chemical, Biological, and Environmental Engineering, Oregon State University, Corvallis, Oregon 97331-2072, United States

2. Department of Chemistry, Oregon State University, 153 Gilbert Hall, Corvallis, Oregon 97331-4003, United States

3. Department of Chemistry and Chemical Biology, Rutgers, The State University of New Jersey, New Brunswick, New Jersey 08901-8554, United States

4. Department of Chemistry and Biochemistry, University of Oregon, Eugene, Oregon 97403-1253, United States

5. Hewlett Packard Company, 1000 Northeast Circle Boulevard, Corvallis, Oregon 97330-4239, United States

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/am405463u

Reference22 articles.

1. Solution-Processed HafSOx and ZircSOx Inorganic Thin-Film Dielectrics and Nanolaminates

2. High resolution, high sensitivity inorganic resists

3. Evaluation of direct patternable inorganic spin-on hard mask materials using electron beam lithography

4. Evaluation of EUV resist performance with interference lithography towards 11 nm half-pitch and beyond

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