Robust High-κ Response in Molecularly Thin Perovskite Nanosheets-Reference-Cited by-同舟云学术

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Robust High-κ Response in Molecularly Thin Perovskite Nanosheets

Published:2010-08-24 Issue:9 Volume:4 Page:5225-5232
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Osada Minoru¹²,Akatsuka Kosho¹²,Ebina Yasuo¹²,Funakubo Hiroshi³,Ono Kanta⁴,Takada Kazunori¹²,Sasaki Takayoshi¹²

Affiliation:

1. International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan

2. CREST, Japan Science and Technology Agency, Kawaguchi, Saitama 332-0012, Japan

3. Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8502, Japan

4. Institute of Materials Structure Science, High Energy Accelerator Research Organization, Tsukuba, Ibaraki 305-0801, Japan

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/nn101453v

Reference37 articles.

1. HIGH-DIELECTRIC CONSTANT THIN FILMS FOR DYNAMIC RANDOM ACCESS MEMORIES (DRAM)

2. Alternative dielectrics to silicon dioxide for memory and logic devices

3. Progress in the developments of (Ba,Sr)TiO3 (BST) thin films for Gigabit era DRAMs

4. Physics of thin-film ferroelectric oxides

5. The latest edition of the ITRS roadmap can be found athttp://public.itrs.net.

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