Monolithic Metal–Semiconductor–Metal Heterostructures Enabling Next-Generation Germanium Nanodevices-Reference-Cited by-同舟云学术

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Monolithic Metal–Semiconductor–Metal Heterostructures Enabling Next-Generation Germanium Nanodevices

Published:2021-03-08 Issue:10 Volume:13 Page:12393-12399
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Wind Lukas¹,Sistani Masiar¹^ORCID,Song Zehao¹,Maeder Xavier²,Pohl Darius³,Michler Johann²,Rellinghaus Bernd³,Weber Walter M.¹^ORCID,Lugstein Alois¹^ORCID

Affiliation:

1. Institute of Solid State Electronics, Technische Universität Wien, Gußhausstraße 25-25a, Vienna 1040, Austria

2. Swiss Federal Laboratories for Materials Science and Technology, Laboratory for Mechanics of Materials and Nanostructures, Feuerwerkerstrasse 39, Thun 3602, Switzerland

3. Dresden Center for Nanoanalysis, Technische Universität Dresden, Helmholtzstraße 18, Dresden 01069, Germany

Funder

Austrian Science Fund

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.1c00502

Reference48 articles.

1. Integrated nanoelectronics for the future

2. Nanowire Electronics: From Nanoscale to Macroscale

3. Germanium Based Field-Effect Transistors: Challenges and Opportunities

4. Quantum Confinement Effects in Extremely Thin Body Germanium n-MOSFETs

5. Single-crystalline germanium nanomembrane photodetectors on foreign nanocavities

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