Ultrafast and Highly Stable Photodetectors Based on p-GeSe/n-ReSe2 Heterostructures-Reference-Cited by-同舟云学术

Ultrafast and Highly Stable Photodetectors Based on p-GeSe/n-ReSe2 Heterostructures

Published:2021-10-03 Issue:40 Volume:13 Page:47882-47894
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Afzal Amir Muhammad¹²^ORCID,Iqbal Muhammad Zahir³^ORCID,Dastgeer Ghulam²^ORCID,Nazir Ghazanfar⁴,Eom Jonghwa²^ORCID

Affiliation:

1. Department of Physics, Riphah International University, 13-km Raiwind Road, Lahore 54000, Pakistan

2. Department of Physics & Astronomy and Graphene Research Institute-Texas Photonics Center International Research Center (GRI−TPC IRC), Sejong University, Seoul 05006, Korea

3. Nanotechnology Research Laboratory, Faculty of Engineering Sciences, GIK Institute of Engineering Sciences and Technology, Topi 23640, Khyber Pakhtunkhwa, Pakistan

4. Department of Chemistry, Inha University, 100 Inharo, Incheon 22212, Korea

Funder

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.1c12035

Reference70 articles.

1. Palladium Diselenide Long-Wavelength Infrared Photodetector with High Sensitivity and Stability

2. Room temperature high-detectivity mid-infrared photodetectors based on black arsenic phosphorus