Heterostructures stacked with X<sub>2</sub>SY (X = In, Ga; Y = Se, Te) and g-C<sub>2</sub>N monolayers for high power conversion efficiency solar cells: insight from electronic properties and nonadiabatic dynamics-Reference-Cited by-同舟云学术

Heterostructures stacked with X₂SY (X = In, Ga; Y = Se, Te) and g-C₂N monolayers for high power conversion efficiency solar cells: insight from electronic properties and nonadiabatic dynamics

Published:2024 Issue:27 Volume:12 Page:16559-16568
ISSN:2050-7488
Container-title:Journal of Materials Chemistry A
language:en
Short-container-title:J. Mater. Chem. A

Author:

Wan Xue-Qing¹^ORCID,Yang Chuan-Lu¹²^ORCID,Li Xiao-Hu²³^ORCID,Liu Yu-Liang¹^ORCID,Zhao Wen-Kai¹^ORCID

Affiliation:

1. School of Physics and Optoelectronic Engineering, Ludong University, Yantai 264025, China

2. Xinjiang Astronomical Observatory, Chinese Academy of Sciences, Urumqi 830011, China

3. Key Laboratory of Radio Astronomy, Chinese Academy of Sciences, Urumqi 830011, China

Abstract

A g-C2N/In2STe heterostructure with high power conversion efficiency (10.01%) and carrier utilization efficiency was screened from 114 different configurations based on its electronic properties and nonadiabatic molecular dynamics.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/TA/D4TA01263A

Reference67 articles.

1. A New Silicon p‐n Junction Photocell for Converting Solar Radiation into Electrical Power

2. Van der Waals heterostructures

3. Progress and Insight of Van der Waals Heterostructures Containing Interlayer Transition for Near Infrared Photodetectors

4. Type-I van der Waals heterostructure formed by MoS2 and ReS2 monolayers

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