Ultrafast and Highly Sensitive Dual-Channel FET Photodetector Based on a Two-Dimensional MoS2 Homojunction-Reference-Cited by-同舟云学术

Ultrafast and Highly Sensitive Dual-Channel FET Photodetector Based on a Two-Dimensional MoS2 Homojunction

Author:

Shan Yufeng¹²³^ORCID,Yin Ziwei²³,Zhang Yi²³,Pan Changyi²³,Deng Huiyong²³⁴,Dai Ning¹²³⁴

Affiliation:

1. Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, P. R. China

2. State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, P. R. China

3. University of Chinese Academy of Sciences, Beijing 100864, China

4. Zhejiang Lab, Hangzhou 311100, P. R. China

Funder

Foundation of Key Laboratory of Infrared Imaging Materials and Detectors

Shanghai Natural Science Foundation

National Natural Science Foundation of China

Frontier Science Research Project (Key Programs) of the Chinese Academy of Sciences

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

Reference50 articles.

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