Spin–Orbit Torque Switching of a High-Quality Perpendicularly Magnetized Ferrimagnetic Heusler Mn3Ge Film-Reference-Cited by-同舟云学术

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Spin–Orbit Torque Switching of a High-Quality Perpendicularly Magnetized Ferrimagnetic Heusler Mn3Ge Film

Published:2021-04-06 Issue:15 Volume:13 Page:18294-18300
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Ren Lizhu¹^ORCID,Liu Liang²,Shu Xinyu²,Lin Weinan²,Yang Ping³,Chen Jingsheng²^ORCID,Teo Kie Leong¹

Affiliation:

1. Department of Electrical and Computer Engineering, National University of Singapore, 117576, Singapore

2. Department of Materials Science and Engineering, National University of Singapore, 117575, Singapore

3. Singapore Synchrotron Light Source (SSLS), National University of Singapore, 117603, Singapore

Funder

Agency for Science, Technology and Research

Ministry of Education - Singapore

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.1c01720

Reference43 articles.

1. Perpendicular switching of a single ferromagnetic layer induced by in-plane current injection

2. Spin-Torque Switching with the Giant Spin Hall Effect of Tantalum

3. Current-Induced Switching of Perpendicularly Magnetized Magnetic Layers Using Spin Torque from the Spin Hall Effect

4. Spin-orbit torque magnetization switching of a three-terminal perpendicular magnetic tunnel junction

5. Spin-Orbit-Torque Switching in 20-nm Perpendicular Magnetic Tunnel Junctions

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