Substrate Effects on the Bandwidth of CdSe Quantum Dot Photodetectors
Author:
Affiliation:
1. Institute for Physical and Theoretical Chemistry, University of Tübingen, Tübingen 72076, Germany
2. Center for Light-Matter Interaction, Sensors and Analytics LISA+, University of Tübingen, Tübingen 72076, Germany
Funder
Deutsche Forschungsgemeinschaft
H2020 European Research Council
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.1c13581
Reference49 articles.
1. Fast, Infrared-Active Optical Transistors Based on Dye-Sensitized CdSe Nanocrystals
2. Engineering the Temporal Response of Photoconductive Photodetectors via Selective Introduction of Surface Trap States
3. Heavy-Metal-Free Solution-Processed Nanoparticle-Based Photodetectors: Doping of Intrinsic Vacancies Enables Engineering of Sensitivity and Speed
4. Trap engineering in solution processed PbSe quantum dots for high-speed MID-infrared photodetectors
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