Trap engineering in solution processed PbSe quantum dots for high-speed MID-infrared photodetectors-Reference-Cited by-同舟云学术

Trap engineering in solution processed PbSe quantum dots for high-speed MID-infrared photodetectors

Published:2019 Issue:19 Volume:7 Page:5658-5669
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Dolatyari Mahboubeh¹²³⁴⁵^ORCID,Rostami Ali¹²³⁴⁵^ORCID,Mathur Sanjay⁶⁷⁸⁹^ORCID,Klein Axel⁶⁷⁸⁹^ORCID

Affiliation:

1. SP-EPT Labs

2. ASEPE Company

3. Industrial Park of Advanced Technologies

4. Tabriz

5. Iran

6. Department für Chemie

7. Institut für Anorganische Chemie

8. Universität zu Köln

9. Germany

Abstract

The ongoing quest to find methods to control the trap states in solution processed nanostructures (trap engineering) will revolutionise the applications of nanomaterials for optoelectronic purposes.

Funder

Universität zu Köln

Deutscher Akademischer Austauschdienst

Shiraz University

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/TC/C8TC06093B

Reference69 articles.

1. The Impact of Silicon Photonics

2. 2.5 Gbit/s polycrystalline germanium-on-silicon photodetector operating from 1.3 to 1.55 μm

3. Photovoltage field-effect transistors

4. Trap Engineering of CdTe Nanoparticle for High Gain, Fast Response, and Low Noise P3HT:CdTe Nanocomposite Photodetectors

5. Colloidal Quantum-Dot Photodetectors Exploiting Multiexciton Generation

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