Toward Low-Temperature Solid-Source Synthesis of Monolayer MoS2

Author:

Tang Alvin1ORCID,Kumar Aravindh1ORCID,Jaikissoon Marc1,Saraswat Krishna123,Wong H.-S. Philip13,Pop Eric123ORCID

Affiliation:

1. Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States

2. Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States

3. Precourt Institute for Energy, Stanford University, Stanford, California 94305, United States

Funder

Semiconductor Research Corporation

Stanford SystemX Alliance

National Science Foundation (NSF)

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Reference74 articles.

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2. Bae, G.; 3nm GAA Technology Featuring Multi-Bridge-Channel FET for Low Power and High Performance Applications. Technical Digest—International Electron Devices Meeting, IEDM; IEEE, 2018; pp 28.7.1–28.7.4.

3. Scaling the Si MOSFET: from bulk to SOI to bulk

4. Electric Field Effect in Atomically Thin Carbon Films

5. Contact engineering for 2D materials and devices

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