Large Perpendicular Magnetic Anisotropy in Ta/CoFeB/MgO on Full-Coverage Monolayer MoS2 and First-Principles Study of Its Electronic Structure-Reference-Cited by-同舟云学术

Large Perpendicular Magnetic Anisotropy in Ta/CoFeB/MgO on Full-Coverage Monolayer MoS2 and First-Principles Study of Its Electronic Structure

Published:2021-07-01 Issue:27 Volume:13 Page:32579-32589
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Zhou Ziqi¹²,Marcon Paul³,Devaux Xavier²^ORCID,Pigeat Philippe²,Bouché Alexandre²,Migot Sylvie²,Jaafar Abdallah²,Arras Rémi³,Vergnat Michel²,Ren Lei⁴,Tornatzky Hans⁴,Robert Cedric⁴,Marie Xavier⁴,George Jean-Marie⁵,Jaffrès Henri-Yves⁵,Stoffel Mathieu²^ORCID,Rinnert Hervé²,Wei Zhongming¹^ORCID,Renucci Pierre⁴,Calmels Lionel³,Lu Yuan²^ORCID

Affiliation:

1. State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100083, China

2. Institut Jean Lamour, Université de Lorraine, CNRS UMR7198, Campus ARTEM, 2 Allée André Guinier, BP 50840, 54011 Nancy, France

3. CEMES, CNRS, Université de Toulouse, 29 rue Jeanne Marvig, BP 94347, F-31055 Toulouse, France

4. Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Av. Rangueil, 31077 Toulouse, France

5. Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France

Funder

Agence Nationale de la Recherche

National Key Research and Development Program of China

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.1c08805

Reference70 articles.

1. Atomically ThinMoS2: A New Direct-Gap Semiconductor

2. Single-layer MoS2 transistors

3. Coupled Spin and Valley Physics in Monolayers ofMoS2and Other Group-VI Dichalcogenides

4. Control of valley polarization in monolayer MoS2 by optical helicity

5. Robust optical emission polarization in MoS2monolayers through selective valley excitation

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Tuning the spin-orbit coupling, magnetic proximity, and band hybridization in Fe(001)/MgO/MoS2 multilayers;Physical Review B;2024-04-01

2. Interfacial Resonance States-Induced Negative Tunneling Magneto-Resistance in Orthogonally Magnetized CoFeB/MgO/CoFeB;IEEE Transactions on Magnetics;2024-03

3. Selective nonreciprocal localization of flat magnonic modes induced by a periodic Dzyaloshinskii-Moriya interaction;Physical Review B;2024-02-21

4. Strain and ferroelectric polarization influence on perpendicular magnetic anisotropy of CoFe3N/BaTiO3 heterostructure;Results in Physics;2024-02

5. Twisted bilayer graphene reveals its flat bands under spin pumping;Physical Review B;2023-09-01