Aliovalent Doping Engineering for A- and B-Sites with Multiple Regulatory Mechanisms: A Strategy to Improve Energy Storage Properties of Sr0.7Bi0.2TiO3-Based Lead-Free Relaxor Ferroelectric Ceramics

Author:

Zhao Peng123,Fang Zixuan124,Zhang Xingchen5,Chen Jingjing12,Shen Yidi6,Zhang Xing12,An Qi6ORCID,Yang Chengtao12,Gao Xingsen5ORCID,Zhang Shuren12,Tang Bin12ORCID

Affiliation:

1. National Engineering Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu 611731, China

2. State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China

3. Department of Mechanical Engineering, National University of Singapore, 117575 Singapore

4. School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu 611731, China

5. South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510631, China

6. Department of Chemical and Materials Engineering, University of Nevada—Reno, Reno, Nevada 89557, United States

Funder

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

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