Optoelectronic Memory Capacitor Based on Manipulation of Ferroelectric Properties
Author:
Affiliation:
1. Faculty of Electrical Engineering, Shahid Beheshti University, G.C., P.O. Box, 198396-9411 Tehran, Iran
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.1c14528
Reference37 articles.
1. Nonvolatile ferroelectric field-effect transistors
2. A review of flexible perovskite oxide ferroelectric films and their application
3. Ferroelectric polymers for non‐volatile memory devices: a review
4. Why is nonvolatile ferroelectric memory field-effect transistor still elusive?
5. Ferroelectric Field Effect Transistors for Memory Applications
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