Amorphous Boron Nitride Memristive Device for High-Density Memory and Neuromorphic Computing Applications-Reference-Cited by-同舟云学术

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Amorphous Boron Nitride Memristive Device for High-Density Memory and Neuromorphic Computing Applications

Published:2022-02-18 Issue:8 Volume:14 Page:10546-10557
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Khot Atul C.¹,Dongale Tukaram D.²,Nirmal Kiran A.¹,Sung Ji Hoon¹,Lee Ho Jin¹,Nikam Revannath D.³,Kim Tae Geun¹^ORCID

Affiliation:

1. School of Electrical Engineering, Korea University, Anam-ro 145, Seongbuk-gu, Seoul 02841, Republic of Korea

2. School of Nanoscience and Biotechnology, Shivaji University, Kolhapur 416004, India

3. Department of Material Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Republic of Korea

Funder

Samsung

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.1c23268

Reference69 articles.

1. Nanoscale Memristor Device as Synapse in Neuromorphic Systems

2. Quantum Conductance in Silicon Oxide Resistive Memory Devices

3. Physics for neuromorphic computing

4. High switching endurance in TaOx memristive devices

5. High precision tuning of state for memristive devices by adaptable variation-tolerant algorithm

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