Author:
Mehonic A.,Vrajitoarea A.,Cueff S.,Hudziak S.,Howe H.,Labbé C.,Rizk R.,Pepper M.,Kenyon A. J.
Publisher
Springer Science and Business Media LLC
Reference28 articles.
1. Hutchby, J. & Garner, M. Assessment of the Potential & Maturity of Selected Emerging Research Memory Technologies Workshop & ERD/ERM Working Group Meeting. (2010 April 6–7).
www.itrs.net/Links/2010ITRS/2010Update/ToPost/ERD_ERM_2010FINALReportMemoryAssessment_ITRS.pdf
, accessed 7th May 2013.
2. Mehonic, A. et al. Resistive switching in silicon suboxide films. J. Appl. Phys. 111, 074507 (2012).
3. Mehonic, A. et al. Electrically tailored resistance switching in silicon oxide. Nanotechnology 23, 455201 (2012).
4. Waser, R. & Aono, M. Nanionics-based resistive switching memories. Nat. Mater. 6 (11), 833 (2007).
5. Waser, R., Dittmann, R., Staikov, G. & Szot, K. Redox-based resistive switching memories – nanionic mechanisms, prospects and challenges. Adv. Mater. 21, 2632 (2009).
Cited by
140 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献