Strain, Doping, and Electronic Transport of Large Area Monolayer MoS2 Exfoliated on Gold and Transferred to an Insulating Substrate-Reference-Cited by-同舟云学术

Strain, Doping, and Electronic Transport of Large Area Monolayer MoS2 Exfoliated on Gold and Transferred to an Insulating Substrate

Published:2021-06-24 Issue:26 Volume:13 Page:31248-31259
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Panasci Salvatore Ethan¹²,Schilirò Emanuela¹,Greco Giuseppe¹^ORCID,Cannas Marco³,Gelardi Franco M.³,Agnello Simonpietro¹³⁴^ORCID,Roccaforte Fabrizio¹^ORCID,Giannazzo Filippo¹^ORCID

Affiliation:

1. CNR-IMM, Strada VIII, 5 95121, Catania, Italy

2. Department of Physics and Astronomy, University of Catania, Via Santa Sofia 64, 95123 Catania, Italy

3. Department of Physics and Chemistry Emilio Segrè, University of Palermo, Via Archirafi 36, 90123 Palermo, Italy

4. ATeN Center, Università degli Studi di Palermo, Viale delle Scienze, Edificio 18, 90128 Palermo, Italy

Funder

Ministero dell'Istruzione, dell'Universit?? e della Ricerca

PON project EleGaNTe

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.1c05185

Reference71 articles.

1. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

2. Integrated Circuits and Logic Operations Based on Single-Layer MoS2

3. Ultrasensitive photodetectors based on monolayer MoS2

4. Single-Layer MoS2 Phototransistors

5. Fabrication of Single- and Multilayer MoS2 Film-Based Field-Effect Transistors for Sensing NO at Room Temperature

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