Investigation of Band-Offsets at Monolayer–Multilayer MoS2 Junctions by Scanning Photocurrent Microscopy-Reference-Cited by-同舟云学术

Investigation of Band-Offsets at Monolayer–Multilayer MoS2 Junctions by Scanning Photocurrent Microscopy

Published:2015-03-30 Issue:4 Volume:15 Page:2278-2284
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Howell Sarah L.¹,Jariwala Deep¹,Wu Chung-Chiang¹,Chen Kan-Sheng¹,Sangwan Vinod K.¹,Kang Junmo¹,Marks Tobin J.¹,Hersam Mark C.¹,Lauhon Lincoln J.¹

Affiliation:

1. Department of Materials Science and Engineering, ‡Department of Chemistry, §Department of Medicine, and ∥Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States

Funder

Division of Materials Research

Division of Graduate Education

Basic Energy Sciences

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl504311p

Reference55 articles.

1. Elucidating the Photoresponse of Ultrathin MoS2 Field-Effect Transistors by Scanning Photocurrent Microscopy

2. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

3. Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides

4. Two-dimensional atomic crystals

5. Visibility of dichalcogenide nanolayers

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