Elucidating the Photoresponse of Ultrathin MoS2 Field-Effect Transistors by Scanning Photocurrent Microscopy-Reference-Cited by-同舟云学术

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Elucidating the Photoresponse of Ultrathin MoS2 Field-Effect Transistors by Scanning Photocurrent Microscopy

Published:2013-07-19 Issue:15 Volume:4 Page:2508-2513
ISSN:1948-7185
Container-title:The Journal of Physical Chemistry Letters
language:en
Short-container-title:J. Phys. Chem. Lett.

Author:

Wu Chung-Chiang¹,Jariwala Deep¹,Sangwan Vinod K.¹,Marks Tobin J.¹²,Hersam Mark C.¹²³,Lauhon Lincoln J.¹

Affiliation:

1. Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States

2. Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States

3. Department of Medicine, Northwestern University, Evanston, Illinois 60208, United States

Publisher

American Chemical Society (ACS)

Subject

General Materials Science,Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/jz401199x

Reference66 articles.

1. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

2. Energy Bands for2H−NbSe2and2H−MoS2

3. Control of valley polarization in monolayer MoS2 by optical helicity

4. Tightly bound trions in monolayer MoS2

5. Valley polarization in MoS2 monolayers by optical pumping

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