Full-Area i-a-Si:H/ATO/Mg Electron-Selective Contacts for Silicon Solar Cells-Reference-Cited by-同舟云学术

Full-Area i-a-Si:H/ATO/Mg Electron-Selective Contacts for Silicon Solar Cells

Published:2023-09-06 Issue:18 Volume:6 Page:9446-9454
ISSN:2574-0962
Container-title:ACS Applied Energy Materials
language:en
Short-container-title:ACS Appl. Energy Mater.

Author:

Liu Xiaoning¹²³⁴,Xu Zhiyuan¹²³⁴,Yan Yu¹²³⁴,Song Yaya¹²³⁴,Huang Qian¹²³⁴^ORCID,Ren Huizhi¹²³⁴,Zhang Xiaodan¹²³⁴^ORCID,Zhao Ying¹²³⁴,Hou Guofu¹²³⁴^ORCID

Affiliation:

1. Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin, 300350, China

2. Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, Tianjin, 300350, China

3. Engineering Research Center of Thin Film Photoelectronic Technology, Ministry of Education, Tianjin, 300350, China

4. State Key Laboratory of Photovoltaic Materials and Solar Cells, Tianjin, 300350, China

Funder

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

Electrical and Electronic Engineering,Materials Chemistry,Electrochemistry,Energy Engineering and Power Technology,Chemical Engineering (miscellaneous)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaem.3c01399

Reference49 articles.

1. Solar cell efficiency tables (Version 61)

2. Silicon heterojunction solar cells with up to 26.81% efficiency achieved by electrically optimized nanocrystalline-silicon hole contact layers

3. Dopant-free materials for carrier-selective passivating contact solar cells: A review

4. Surface passivation of crystalline silicon solar cells: Present and future

5. Passivating Contacts for Crystalline Silicon Solar Cells: From Concepts and Materials to Prospects

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