Intrinsic Modulation Doping Enhances the Thermoelectric Performance of Monolayer GaGeTe-Reference-Cited by-同舟云学术

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Intrinsic Modulation Doping Enhances the Thermoelectric Performance of Monolayer GaGeTe

Published:2023-11-21 Issue:23 Volume:6 Page:11915-11923
ISSN:2574-0962
Container-title:ACS Applied Energy Materials
language:en
Short-container-title:ACS Appl. Energy Mater.

Author:

Rafiee Diznab Mohammad¹^ORCID,Xia Yi²^ORCID,Naghavi S. Shahab³^ORCID

Affiliation:

1. Department of Physics and Atmospheric Science, Dalhousie University, Halifax, Nova Scotia B3H 4R2, Canada

2. Department of Mechanical and Materials Engineering, Portland State University, 1825 SW Broadway, Portland, Oregon 97201, United States

3. Department of Physical and Computational Chemistry, Shahid Beheshti University, Tehran 1983969411, Iran

Funder

Shahid Beheshti University

Publisher

American Chemical Society (ACS)

Subject

Electrical and Electronic Engineering,Materials Chemistry,Electrochemistry,Energy Engineering and Power Technology,Chemical Engineering (miscellaneous)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaem.3c02062

Reference70 articles.

1. Low-dimensional thermoelectric materials

2. Wearable thermoelectrics for personalized thermoregulation

3. Dense dislocation arrays embedded in grain boundaries for high-performance bulk thermoelectrics

4. Achieving an Ultrahigh Power Factor in Sb2Te2Se Monolayers via Valence Band Convergence

5. Thermoelectric band engineering: The role of carrier scattering

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