Synthesis and Materials Properties of Sn/P-Doped Ge on Si(100): Photoluminescence and Prototype Devices
Author:
Affiliation:
1. Department of Chemistry and Biochemistry, Arizona State University, Tempe, Arizona 85287-1604, United States
2. Department of Physics, Arizona State University, Tempe, Arizona 85287-1504, United States
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,General Chemical Engineering,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/cm201648x
Reference16 articles.
1. New infrared detector on a silicon chip
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3. Ge/Si (001) Photodetector for Near Infrared Light
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5. Chemical routes to Ge∕Si(100) structures for low temperature Si-based semiconductor applications
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