Dopant Control by Atomic Layer Deposition in Oxide Films for Memristive Switches-Reference-Cited by-同舟云学术

Dopant Control by Atomic Layer Deposition in Oxide Films for Memristive Switches

Published:2010-12-29 Issue:2 Volume:23 Page:123-125
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Yang J. Joshua¹,Kobayashi Nobuhiko P.²,Strachan John Paul¹,Zhang M.-X.¹,Ohlberg Douglas A. A.¹,Pickett Matthew D.¹,Li Zhiyong¹,Medeiros-Ribeiro Gilberto¹,Williams R. Stanley¹

Affiliation:

1. Hewlett-Packard Laboratories, Palo Alto, California, United States

2. Electrical Engineering Department, Baskin School of Engineering, University of California, Santa Cruz, California, United States

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cm1020959

Reference34 articles.

1. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

2. Synthesis and properties of epitaxial electronic oxide thin-film materials

3. Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3

4. High switching endurance in TaOx memristive devices

5. Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

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