Thermodynamics of the Formation of Ti- and Cr-doped CuGaS2 Intermediate-band Photovoltaic Materials
Author:
Affiliation:
1. Instituto de Energía Solar, Universidad Politécnica de Madrid, ETSI de Telecomunicación, Ciudad Universitaria, 28040 Madrid, Spain and Instituto de Catálisis y Petroleoquímica, CSIC, Marie Curie 2, Cantoblanco, 28049 Madrid, Spain
Publisher
American Chemical Society (ACS)
Subject
Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/jp0774185
Reference22 articles.
1. Increasing the Efficiency of Ideal Solar Cells by Photon Induced Transitions at Intermediate Levels
2. Ab-initio spin polarized electronic structure calculations for TixGanAsm photovoltaic materials
3. First-principles investigation of isolated band formation in half-metallicTixGa1−xP(x=0.3125–0.25)
4. Energetics of formation of TiGa3As4 and TiGa3P4 intermediate band materials
5. First principles calculation of isolated intermediate bands formation in a transition metal-doped chalcopyrite-type semiconductor
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